Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations

Thermally stimulated luminescence spectroscopy has been applied to study the deep centres in unintentionally doped high resistivity GaN epilayers grown by the metal organic chemical vapour deposition method on c-sapphire substrates. Two trap states with activation energies of 0.12 and 0.62 eV are evaluated from two luminescence peaks at 141.9 and 294.7 K in the luminescence curve. Our spectroscopy measurement, in combination with more accurate first-principles studies, provided insights into the microscopic origin of these levels. Our investigations suggest that the lower level at 0.12 eV might originate from C-N, which behaves as a hole trap state; the deeper level at 0.62 eV can be correlated with V-Ga that corresponds to the yellow luminescence band observed in low-temperature photoluminescence spectra.

Characterization, photoluminescence, thermally stimulated luminescence and electron spin resonance studies of Eu(3+) doped LaAlO(3) phosphor

Europium-doped lanthanum aluminate (LaAlO(3)) powder was prepared by using a combustion method. The crystallization, surface morphology, specific surface area and luminescence properties of the samples have been investigated. Photoluminescence studies of Eu doped LaAlO(3) showed orange-reddish emission due to Eu(3+) ions. LaAlO(3):Eu(3+) exhibits one thermally stimulated luminescence (TSL) peak around 400 degrees C. Room temperature electron spin resonance spectrum of irradiated phosphor appears to be a superposition of two centres. One of them (centre I) with principal g-value 2.017 is identified as an O(-) centre while centre II with an isotropic g-value 2.011 is assigned to an F(+) centre (singly ionized oxygen vacancy). An additional defect centre observed during thermal annealing around 300 degrees C grows with the annealing temperature. This centre (assigned to F(+) centre) originates from an F-centre (oxygen vacancy with two electrons) and the F-centre along with the associated F(+) centre appear to correlate with the observed TSL peak in LaAlO(3):Eu(3+) phosphor. The activation energy for this peak has been determined to be 1.54 eV from TSL data. (C) 2010 Elsevier Masson SAS. All rights reserved.

Response variation of optically stimulated luminescence dosimeters

This study investigates the variability in response of optically stimulated luminescence dosimeters (OSLDs). Examining the source of sensitivity variations in these dosimeters allows for a more comprehensive understanding of the Landauer nanoDots and their potential for current and future applications. In this work, OSLDs were scanned with a MicroCT scanner to determine potential sources for the variation in relative sensitivity across a selection of Landauer nanoDot dosimeters. Specifically, the correlation between a dosimeters relative sensitivity and the loading density of Al2O3:C powder was determined. When extrapolating the sensitive volume's radiodensity from the CT data, it was shown that there is a non-uniform distribution in crystal growth. It was calculated that a 0.05% change in the nominal volume of the chip produces a 1% change in the overall response. Additionally, the ‘true’ volume of an OSLD's sensitive material is, on average, 18% less than that which has been reported in literature, mainly due to the presence of air cavities in the material's structure. This work demonstrated that the amount of sensitive material is approximately linked to the total correction factor.

Response variation of optically stimulated luminescence dosimeters

Introduction This study investigates uncertainties pertaining to the use of optically stimulated luminescence dosimeters (OSLDs) in radiotherapy dosimetry. The sensitivity of the luminescent material is related to the density of recombination centres [1], which is in the range of 1015–1016 cm-3. Because of this non-uniform distribution of traps in crystal growth the sensitivity varies substantially within a batch of dosimeters. However, a quantitative understanding of the relationship between the response of an OSLD and its sensitive volume has not yet been investigated or reported in literature. Methods In this work, OSLDs are scanned with a MicroCT scanner to determine potential sources for the variation in relative sensitivity across a selection of Landauer nanoDot dosimeters. Specifically, the correlation between a dosimeters relative sensitivity and the loading density of Al2O3:C powder was determined. Results When extrapolating the sensitive volume’s radiodensity from the CT data, it was shown that there is a non-uniform distribution incrystal growth as illustrated in Fig. 1. A plot of voxel count versus the element-specific correction factor is shown in Fig. 2 where each point represents a single OSLD. A line was fitted which has an R2-value of 0.69 and a P-value of 8.21 9 10-19. This data shows that the response of a dosimeter decreases proportionally with sensitive volume. Extrapolating from this data, a quantitative relationship between response and sensitive volume was roughly determined for this batch of dosimeters. A change in volume of 1.176 9 10-5 cm3 corresponds to a 1 % change in response. In other words, a 0.05 % change in the nominal volume of the chip would result in a 1 % change in response. Discussion and conclusions This work demonstrated that the amount of sensitive material is approximately linked to the total correction factor. Furthermore, the ‘true’ volume of an OSLD’s sensitive material is, on average, 17.90 % less than that which has been reported in literature, mainly due to the presence of air cavities in the material’s structure. Finally, the potential effects of the inaccuracy of Al2O3:C deposition increases with decreasing chip size. If a luminescent dosimeter were manufactured with a smaller volume than currently employed using the same manufacturing protocol, the variation in response from chip to chip would more than likely exceed the current 5 % range.

Determination of activation energy for thermal regeneration of EL2 from its metastable state by thermally stimulated photocurrent measurements

It is shown that thermally stimulated photocurrent measurements provide a simple and effective method of determining the activation energy of thermal regeneration rate of EL2 from the metastable state to the normal state in undoped semi‐insulating GaAs. The thermal regeneration rate r is found to be 2.5×108 exp(−0.26 eV/kT) s−1.

Optically Stimulated Luminescence (OSL) Dating of Sediments from Himalaya

Optically Stimulated Luminescence (OSL) dating gives the age of most recent daylight exposure or heating of samples to >400 degrees C or the formation events of authigenic minerals. These correspond to the age of sedimentation and burial, ages of thermal events like contact heating by lava flows and heating during faulting and sand dyke formation, and the formation of a mineral via chemical precipitation. With the first observation of OSL in 1985, this method now occupies centre stage in Quaternary Geochronology. The use of OSL method for sediments from Himalaya began over three decades ago. The method has since provided chronology for a variety of events, such as past glaciation events, formation ages of river terraces, paleo-lacustrine deposits, landslides, floods, seismic events with substantive new insights into timing and style of geological processes. Theoretically, the dating range of method is present to a Million years, and this critically depends on two factors, viz, luminescence properties of mineral and their radiation environments. The general working range using quartz is 200ka, and using feldspars is up to Brunhes Matuyam Boundary. Extensions beyond this limit are currently being explored.

Influence of carbon on the thermoluminescence and optically stimulated luminescence of α -Al2O3:C crystals

alpha-Al2O3:C crystal shows excellent thermoluminescence (TL) and optically stimulated luminescence (OSL) properties but the real role carbon plays in this crystal is still not clearly understood so far. In this work, alpha-Al2O3:C crystal doping with different amounts of carbon were grown by the temperature gradient technique, and TL and OSL properties of as-grown crystals were investigated. Additionally, a mechanism was proposed to explain the role of carbon in forming the TL and OSL properties of alpha-Al2O3:C. TL and OSL intensities of as-grown crystals increase with the increasing amount of carbon doping in the crystal, but no shift is found in the glow peak location at 465 K. As the amount of carbon doping in the crystals decreases, OSL decay rate becomes faster. With the increase in heating rate, the integral TL response of as-grown crystals decreases and glow peak shifts to higher temperatures. TL response decrease rate increases with the increasing amount of carbon doping in the crystals. All the TL and OSL response curves of as-grown crystals show linear-sublinear-saturation characteristic, and OSL dose response exhibits higher sensitivity and wider linear dose range than that of TL. The crystal doping with 5000 ppm carbon shows the best dosimetric properties. Carbon plays the role of a dopant in alpha-Al2O3:C crystal and four-valent carbon anions replace the two-valent anions of oxygen during the crystal growth process, and large amounts of oxygen vacancies were formed, which corresponds to the high absorption coefficient of F and F+ centers in the crystals.

Growth of alpha-Al2O3:C crystal with highly sensitive optically stimulated luminescence

In this work. an alpha-Al2O3:C crystal was directly grown by the temperature gradient technique (TGT) using Al2O3 and graphite powders as the raw materials. The optical, optically stimulated luminescence (OSL) properties and dosimetric characteristics of as-grown crystal were investigated. As-grown alpha-Al2O3:C crystal shows strong absorption band at 205, 230 and 256 nm. Three-dimensional thermoluminescence (TL) emission spectrum of the crystal shows a single emission peak at similar to 415 nm. The OSL decay curve can be fitted to two exponentials, the faster component and the slower component. The OSL response of the crystal shows a linear-sublinear-saturation characteristic. As-grown alpha-Al2O3:C crystal shows excellent linearity in the dose range from 5 x 10(-6) to 50 Gy. For doses higher than the saturation dose (100 Gy). the OSL sensitivity decreases as the dose increases. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

Stimulated luminescence and photo-gated hole burning in BaFCl0.8Br0.2 : Sm2+,Sm3+ phosphors

The photo- and thermo-stimulated luminescence (PSL and TSL) of BaFCl0.8Br0.2:Sm2+,Sm3+ phosphors were investigated. It is found that the stimulated luminescence intensity of Sm2+ is almost equal to that of Sm3+ even if the content of Sm2+ is much lower than that of Sm3+. Only the stimulated luminescence of Sm2+ is observed in the sample in which the content of Sm2+ is much higher than Sm3+, demonstrating that the PSL or TSL efficiency of Sm2+ is much higher than that of Sm3+. This is attributed to the effective overlap of the e-h emission with the absorption of Sm2+ centers which may make the energy transfer from the electron-hole pairs to Sm2+ effectively. In BaFCl0.8Br0.2:Sm2+,Sm3+ the stimulated luminescence is considered to be occurred via the recombination of photoreleased electrons with the [Sm2+ + h] or [Sm3+ + h] complex and the energy transfer from the electron-hole pairs to the luminescence centers (Sm2+ and Sm3+) is concerned to be the major step to determine the stimulated luminescence efficiency. The X-ray-induced stimulated luminescence is compared and connected to the photon gated hole burning. The net result of the two processes is quite similar and may be comparable. It is suggested from the observations of stimulated luminescence that electron migration between Sm2+ and Sm3+ is not the major process, color centers may play an important role in hole burning. The information from stimulated luminescence is helpful for the understanding of the hole burning mechanism. (C) 1999 Elsevier Science Ltd. All rights reserved.